Version 4 SHEET 1 1812 1328 WIRE 352 144 352 96 WIRE -32 160 -32 96 WIRE 304 160 160 160 WIRE 352 160 352 144 WIRE 160 288 160 160 WIRE 208 288 160 288 WIRE 352 288 352 240 WIRE 352 288 288 288 WIRE 768 288 352 288 WIRE 784 288 768 288 WIRE -32 304 -32 240 WIRE 352 320 352 288 WIRE 784 336 784 288 WIRE -304 400 -320 400 WIRE -240 400 -304 400 WIRE -80 400 -160 400 WIRE 32 400 -80 400 WIRE 160 400 160 288 WIRE 160 400 112 400 WIRE 224 400 160 400 WIRE 304 400 224 400 WIRE -80 448 -80 400 WIRE 352 480 352 416 WIRE -320 512 -320 400 WIRE -80 576 -80 528 WIRE 304 576 -80 576 WIRE 784 576 784 416 WIRE 784 576 368 576 WIRE 784 608 784 576 WIRE -80 624 -80 576 WIRE -320 656 -320 592 WIRE 784 736 784 672 WIRE -80 752 -80 688 FLAG -32 304 0 FLAG -32 96 VDD FLAG 352 480 0 FLAG 352 96 VDD FLAG -80 752 0 FLAG 784 736 0 FLAG -320 656 0 FLAG 768 288 OUT FLAG 224 400 AMPIN FLAG -304 400 IN DATAFLAG -80 400 "$" DATAFLAG 512 288 "$" SYMBOL voltage -32 144 R0 SYMATTR InstName V1 SYMATTR Value 5V SYMBOL pmos 304 240 M180 SYMATTR InstName M2 SYMATTR Value pmos_transistor L=10u W=2000u SYMBOL nmos 304 320 R0 SYMATTR InstName M1 SYMATTR Value nmos_transistor L=10u W=1000u SYMBOL res 768 320 R0 SYMATTR InstName R1 SYMATTR Value 1k SYMBOL res 304 272 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName Rf SYMATTR Value {Rf_value} SYMBOL cap -96 624 R0 SYMATTR InstName C1 SYMATTR Value {CL_value} SYMBOL cap 768 608 R0 SYMATTR InstName C2 SYMATTR Value {CL_value} SYMBOL current -320 592 R180 WINDOW 0 24 80 Left 2 WINDOW 3 24 0 Left 2 WINDOW 123 24 -22 Left 2 SYMATTR InstName Iin SYMATTR Value 0 SYMATTR Value2 AC 1A 0deg SYMBOL voltage -256 400 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 -32 56 VBottom 2 SYMATTR InstName V_s SYMATTR Value 0V SYMBOL voltage 16 400 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 -32 56 VBottom 2 SYMATTR InstName V_Regen SYMATTR Value 0V SYMBOL voltage -80 544 R180 WINDOW 0 29 5 Left 2 WINDOW 3 44 82 Left 2 SYMATTR InstName V_Fdbk SYMATTR Value 0V SYMBOL cap 368 560 R90 WINDOW 0 0 32 VBottom 2 WINDOW 3 47 34 VTop 2 SYMATTR InstName X1 SYMATTR Value crystal_3.57MHz SYMATTR Prefix X TEXT 960 464 Left 2 !.model nmos_transistor NMOS (kp=20u Vto=+1V lambda=0.04) TEXT 456 960 Left 2 ;.AC LIN 10000 3.576MegHz 3.588MegHz TEXT 960 240 Left 2 !* 3.57Mhz crystal\n.subckt crystal_3.57MHz 1 2\n l 1 11 0.0555779237\n cs 11 12 3.561696e-14\n r 12 2 50\n cp 1 2 8.90424001e-12\n.ends TEXT 496 912 Left 2 ;.AC DEC 10000000 1kHz 100GHz TEXT 960 512 Left 2 !.model pmos_transistor PMOS (kp=10u Vto=-1V lambda=0.04) TEXT 1208 -504 Left 2 !* 16Mhz crystal\n.subckt crystal_16MHz 1 2\n l 1 11 0.0127779237e6\n cs 11 12 0.00756169600e-6\n r 12 2 1\n cp 1 2 9.9042400e-6\n.ends TEXT 552 1000 Left 2 !.TRAN 20ns 5000ms 0 20ns TEXT 784 -496 Left 2 !* 3.57Mhz crystal\n.subckt NOTcrystal_3.57MHz 1 2\n l 1 11 0.0555779237\n cs 11 12 3.561696e-14\n r 12 2 50\n cp 1 2 0\n.ends TEXT 656 816 Left 2 !.OP TEXT -112 848 Left 2 ;.STEP PARAM Rf_value 100k 200k 50k TEXT -40 896 Left 2 !.PARAM Rf_value = 1Meg TEXT -112 952 Left 2 ;.STEP PARAM CL_value 200p 300p 50p TEXT -24 1000 Left 2 !.PARAM CL_value = 360p TEXT -168 1232 Left 2 ;For TRANSIENT ANALYSIS initial capacitor to a larger voltage to get oscillation started, i.e., .IC V(IN)=5 V. TEXT 608 864 Left 2 !.IC V(IN)=0V